National treasure
In
2004, the order of the Cabinet of Ministers of Ukraine № 73-r of
11.02.2004, in the list of objects that make up the national property of
Ukraine, introduced a unique system for growing single crystals of
compounds of complex oxides and investigation of their physico-chemical
properties, including:
1. Automated installation "Galaxie Mark III" for growing large crystals of refractory compounds of complex oxides by Czochralski (Physitherm, France) consisting of 8 units with autonomous engineering.
2. A comprehensive functional module for growing single-crystal films of complex oxides of compounds by liquid-phase epitaxy (LAS, France).
The main ideological line of a "complex" has been conducting extensive research, the development of physico-chemical bases of the crystallization of complex oxides and compounds of the creation process of obtaining single-crystalline functional materials with a given set of parameters for the development and production of devices and equipment for various purposes.
The main technologies that are the basis of scientific work carried out within the framework of the complex, are the methods of growing single crystals from the melt by the Czochralski and liquid-phase epitaxy of high-temperature solutions in melts.
The basis of the "complex" are specially designed for the performance specifications of SRC "Carat" and manufactured by leading companies in France "LAS" and "Physitherm" setup for growing bulk single crystals of compounds of complex oxides with melting points up to 20000S by the Czochralski method such as "Galaxie Mark III", providing obtaining crystals of up to 40 kg, a diameter of 110 mm in a controlled atmosphere, and the installation of liquid-phase epitaxy of rare-earth oxides such as "Garnet-3" to ensure receipt of defect-free films on substrates up to 100 mm and a thickness of a single crystal layer 700 microns. Technological processes in the above-mentioned plants are fully automated under the control of personal computers.
"Complex" provided with the necessary self-contained systems for the supply of energy resources and technological microclimate (clean room class "100"). Equipment included in the "Complex" is unique and their technical specifications do not have analogues in Ukraine, CIS, and is on par with the best world standards. Saving the "complex" Ukraine will provide an opportunity for fundamental research and applied research to develop new technological processes for obtaining single-crystal materials for quantum electronics, optoelectronics, acoustic and electrooptical, integrated optics, photonics, and acousto-Magnetoelectronics, functional, sensory, bioelectronics, and others on global level, thus paving the way our country on the international market for new high-tech products.
1. Automated installation "Galaxie Mark III" for growing large crystals of refractory compounds of complex oxides by Czochralski (Physitherm, France) consisting of 8 units with autonomous engineering.
2. A comprehensive functional module for growing single-crystal films of complex oxides of compounds by liquid-phase epitaxy (LAS, France).
The main ideological line of a "complex" has been conducting extensive research, the development of physico-chemical bases of the crystallization of complex oxides and compounds of the creation process of obtaining single-crystalline functional materials with a given set of parameters for the development and production of devices and equipment for various purposes.
The main technologies that are the basis of scientific work carried out within the framework of the complex, are the methods of growing single crystals from the melt by the Czochralski and liquid-phase epitaxy of high-temperature solutions in melts.
The basis of the "complex" are specially designed for the performance specifications of SRC "Carat" and manufactured by leading companies in France "LAS" and "Physitherm" setup for growing bulk single crystals of compounds of complex oxides with melting points up to 20000S by the Czochralski method such as "Galaxie Mark III", providing obtaining crystals of up to 40 kg, a diameter of 110 mm in a controlled atmosphere, and the installation of liquid-phase epitaxy of rare-earth oxides such as "Garnet-3" to ensure receipt of defect-free films on substrates up to 100 mm and a thickness of a single crystal layer 700 microns. Technological processes in the above-mentioned plants are fully automated under the control of personal computers.
"Complex" provided with the necessary self-contained systems for the supply of energy resources and technological microclimate (clean room class "100"). Equipment included in the "Complex" is unique and their technical specifications do not have analogues in Ukraine, CIS, and is on par with the best world standards. Saving the "complex" Ukraine will provide an opportunity for fundamental research and applied research to develop new technological processes for obtaining single-crystal materials for quantum electronics, optoelectronics, acoustic and electrooptical, integrated optics, photonics, and acousto-Magnetoelectronics, functional, sensory, bioelectronics, and others on global level, thus paving the way our country on the international market for new high-tech products.
RSS