Optoelectronic devices are widgets that exploit a radiation in optical band at their operation. They adopt, transform and generate a radiation in visible, IR and UV spectral bands. The main factors that ensure progress in optoelectronics are a development of ultrapure, defect-free materials and ultimate technologies for designing new modern devices and widgets.

Technological developments of the SRC «Carat» in optoelectronic field are:

- Prototypes of passively Q-switched microchip lasers on the base of epitaxial structures Y₃Al₅O₁₂:Nd/Y₃Al₅O₁₂:Cr⁴⁺ and Gd₃Ga₅O₁₂:Nd/Gd₃Ga₅O₁₂:Cr⁴⁺ generating optical radiation at 1.06 μm wavelength;

- Prototype of diode pump microlaser on the base of Gd₃Ga₅O₁₂:Nd crystal generating optical radiation at 1.06 or 0.53 μm wavelength;

- Acoustooptical light modulator with the following parameters:

- diffraction efficiency – 4 %/W;

- frequency band center – 1,75 GHz;

- working frequency passband width – 500 MHZ;

- voltage standing-wave ratio (VSWR) – less than 3;

- working wavelength of optical radiation оптичного випромінювання – 0.63 μm;

- Electrooptical light modulator with the following parameters:

- high voltage pulse height – 2 kV;

- pulse duration – 20 ns;

- pulse repetition rate – 1.5 Hz;

- optical contrast – 1:100 no worth;

- radiation resistance – 0.2 GW at light pulse duration 20 ns and wavelength 1.064 μm.

- Solar cell modules.